Gallium nitride GaN single crystal substrate

The substrate of HVPE is: Homoepitaxy, Gan on GaN
Homogeneity: high quality, high cost, difficult technology (dislocation 103-106 / cm2)
  • Item NO.:

    GS-C012
  • Payment:

    L/C、 Western Union、 D/P、 T/T
  • Product Origin:

    Anhui, China
  • Max Size:

    Dia100mm
  • Orientation:

    <0001>、<10-10>
  • Package:

    100 clean bag,1000 exactly clean bag
  • Product Detail

  • Specification

  • Process flow

  • Packaging

  • Transportation

  • FAQ

2 Inch Free-standing GaN Wafer Specification


 Item

 Specification

crystalspecification

Production(Pgrade)

Research(Rgrade)

Dummy(Dgrade)

Crystaltype

Singlecrystal

Orientation

(0 0 0 1) Gaface

C-plane off angle towardM-axis

0.5° ±0.15°

C-plane off angle towardA-axis

0° ±0.15°

(002)FWHM

< 100 arcsec

(102)FWHM

< 100 arcsec

Latticeradiusofcurvature

> 10 m (measured at 80% xdiameter)




Electricalspecification

Dopingelements

Room temperature resistivity(300K)

N-type(Silicon)

≤0.02ohm-cm

UID

≤0.2ohm-cm

Semi-Insulating(Carbon)

> 1E8ohm-cm

Shapespecification

Majorflatorientation

M-plane (10-10), ±2°(st),±2° (

Q: Are you trading company or manufacturer ?
     We are factory.
Q: How long is your delivery time?
    Generally it is 3-5 days if the goods are in stock.
    or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
    Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
     Payment <=5000USD, 100% in advance.
     Paymen >=5000USD, 80% T/T in advance , balance before shippment.
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