Custom made Gallium Arsenide GaAs single crystal substrate manufacturer from China

Can be customized according to customer needs, special direction and size of the substrate
  • Item NO.:

    GS-C027
  • Payment:

    L/C、 Western Union、 D/P、 T/T
  • Product Origin:

    Anhui, China
  • Max Size:

    Dia100mm
  • Orientation:

    <100>、<110>、<111>
  • Package:

    100 clean bag,1000 exactly clean bag
  • Product Detail

  • Process flow

  • Packaging

  • Transportation

  • FAQ

Main performance parameters

Crystals
structure
Crystal orientation
Melting point
o C
density
g/cm 3
Forbidden band width
GaAs
cube
a=5.653 A
<100>
1238
5.31
1.424

 

Single crystal

Doping

Conductivity type

Carrier concentration cm-3

Dislocation density cm -2

Growth method

Standard substrate ( mm )

GaAs

Si

undoped

N

> 5×10 17

< 5×10 5

VGF

VB

Dia 2″×0.35mm

Dia3"x0.35mm

Dia100×0.65mm

Crystal orientation

(100) 0°±0.5°,<111>


(100) 2°±0.5°off toward <111>A


(100)15°±0.5°off toward <111>A

Size (mm)

0 × 25 × 25. . 3 5mm, 10 × 10 × 0. . 3 5mm,. 5 × 10 × 0. . 3 5mm,. 5. 5 × × 0. . 3 5mm

Can be customized according to customer needs, special direction and size of the substrate

Surface roughness

Surface roughness(Ra):<=5A Atomic particle microscope ( AFM ) test report can be provided

polishing

Single-sided or double-sided

Package

Class 100 clean bag, Class 1000 super clean room

Q: Are you trading company or manufacturer ?
     We are factory.
Q: How long is your delivery time?
    Generally it is 3-5 days if the goods are in stock.
    or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
    Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
     Payment <=5000USD, 100% in advance.
     Paymen >=5000USD, 80% T/T in advance , balance before shippment.
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