High purity Sputtering Metal target Titanium Ti target special-shaped customization manufacturer from China

   Titanium Target Material, Titanium Symbol Ti, Atomic Number 22, Density 4.454g/Cm3, Physical Properties: Melting Point 1668°C, Boiling Point 3262°C, Specific Heat Capacity 0.52 (J / (Kg·K), Heat Of Evaporation 421 (KJ/Mol), The Heat Of Fusion Is 15.45 (KJ/Mol), And The Conductivity Is 0.0234 (106/Cm). Because The Cost Of High-Purity Titanium Is Quite Expensive And The Application Field Is Extremely Limited, It Is Mainly Used As A Getter Material In Semiconductor Materials And Ultra-High Vacuum Devices. 

    High Purity Titanium Has Gettering Properties, Especially Hydrogen, CH4, Co2 Gas, So It Can Be Widely Used In High Vacuum And Ultra-High Vacuum Systems. When Using High-Purity Titanium Sputtering To Make LSI, VLSI, ULSI Line Network, It Can These Integrated Parts Become Extraordinarily Light, Thin, Small In Size And Dense In Circuits. High-Purity Titanium Targets Can Also Be Used As Barrier Metal Materials. The Following Pictures Are Two Typical Microscopic Metallographic Inspection Pictures Of Titanium Sputtering Targets , The Average Particle Size Is Less Than 50um.

     As long as you provide detailed target information, such as purity, size, tolerance requirements, and other technical requirements, we will provide you with a quotation as soon as possible and provide the fastest delivery time.

We Produce High-Purity Sputtering Targets. Its Most Important Advantage Is That In The Process Of Physical Vapor Deposition, A Thin Film With Excellent Electrical Conductivity And Particle Minimization Can Be Obtained. The Following Table Is A Certificate Of Composition Analysis Of 4N5 High-Purity Titanium Sputtering Target. Analysis Methods Used: 1. Use GDMS Or ICP-OES To Analyze Metal Elements; 2. Use LECO For Gas Element Analysis.