Custom made Zinc Oxide ZnO single crystal substrate

ZnO material is a kind of direct band gap wide gap semiconductor material
  • Item NO.:

    GS-C007
  • Payment:

    L/C、 Western Union、 D/P、 T/T
  • Product Origin:

    Anhui, China
  • Max Size:

    25*25MM
  • Orientation:

    <0001>、<1-100>、<11-20>
  • Package:

    100 clean bag,1000 exactly clean bag
  • Product Detail

ZnO material is a kind of direct band gap wide gap semiconductor material. It is a kind of multifunctional crystal with luminescence, electro-optic, scintillation, semiconductor and other properties. It is an excellent substrate material for ZnO, Gan epitaxial films and devices. It has great development potential in short wavelength light-emitting devices, such as LEDs and LDS, and has become another research hotspot in the field of wide gap semiconductor after Gan.

Purity wt%

Impurity: wt%

> 99.99
Mg: <.0005 Al: < .0030 Si: 0.0030 Ti: .0010 Cu: < .0030 Fe: < 0.005 Ca: <.0005 Ag: < .0002

Crystal Structure

Hexagonal: a= 3.252Å, c = 5.313Å

Growth Method

Hydrothermal

Hardness

4 moh scale

Density

5.7 g/cm3

Melt Point

1975 oC

Specific Heat

0.125 cal/gm

Thermoelectric Constant

1200 mV /oK @ 300 oC

Thermal Conductivity

0.006 cal/cm/ oK

Thermal Expansion

2.90 x 10-6/oK

Transmission Range

0.4 - 0.6 m > 50% at 2 mm

Dislocation Density

<0001> plane <100 / cm2

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