Crystal plant custom made Indium arsenide InAs single crystal substrate manufacturer from China

InAs single crystal substrate can grow InAsSb/In-AsPSb, InNAsSb and other heterojunction materials to produce infrared light-emitting devices with wavelengths of 2-14μm. 
  • Item NO.:

    GS-C024
  • Payment:

    L/C、 Western Union、 D/P、 T/T
  • Product Origin:

    Anhui, China
  • Max Size:

    Dia76.5mm
  • Orientation:

    <100>、<110>、<111>
  • Package:

    100 clean bag,1000 exactly clean bag
  • Product Detail

  • Process flow

  • Packaging

  • Transportation

  • FAQ


InAs single crystal substrate


In InAs single crystal substrate can be grown as the InAsSb / the In - AsPSb, InNAsSb other heterostructure , that a wavelength 2 ~ 14 [mu] m infrared light emitting device, with InAs single crystal substrate also can be epitaxially grown AlGaSb superlattice structure materials , Production of mid-infrared quantum cascade lasers. . The infrared devices have a good prospect in the field of gas monitoring, and other low-loss optical fiber communication . Further , InAs single crystal having a high electron mobility , is making a Hall over the material of the device. As a single crystal substrate , InAs materials need to have low dislocation density, good lattice integrity, suitable electrical parameters and high uniformity . The main growth method of InP single crystal materials is the traditional liquid-sealed Czochralski technology ( LEC ). 

Crystals
structure
Crystal orientation
Melting point
o C
density
g/cm 3
Forbidden band width
InAs
cube,
a=6.058 A
<100>
942
5.66
0.45


Main performance parameters
Single crystal
Doping
Conductivity type
Carrier concentration
cm -3
Mobility (cm 2 /Vs)
Dislocation density (cm -2 )
Standard substrate
InAs
Intrinsic
N     
     5*10 16
2*10 4
<5*10 4
Φ2″×0.5mm
Φ3″×0.5mm
InAs
Sn
N
(5-20)*10 17
>2000
<5*10 4
Φ2″×0.5mm
Φ3″×0.5mm
InAs
Zn
P
(1-20) *10 17
100-300
<5*10 4
Φ2″×0.5mm
Φ3″×0.5mm
InAs
S
N
(1-10)*10 17
>2000
<5*10 4
Φ2″×0.5mm
Φ3″×0.5mm
Size (mm)
Dia50.8x0.5mm, 10×10×0.5mm, 10×5×0.5mm can be customized according to customer needs, special orientation and size of the substrate
Surface roughness
Surface roughness(Ra):<=5A
Atomic particle microscopy (AFM) test report can be provided
polishing
Single-sided or double-sided
Package
Class 100 clean bag, Class 1000 super clean room

Q: Are you trading company or manufacturer ?
     We are factory.
Q: How long is your delivery time?
    Generally it is 3-5 days if the goods are in stock.
    or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
    Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
     Payment <=5000USD, 100% in advance.
     Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Leave A Message
If you are interested in our products and want to know more details,please leave a message here,we will reply you as soon as we can.
Related Products
GaN substrate
2" inch Gallium nitride GaN single crystal substrate
The substrate of HVPE is: Homoepitaxy, Gan on GaN Homogeneity: high quality, high cost, difficult technology (dislocation 103-106 / cm2)
GaSb CRYSTAL
Custom made Gallium antimonide GaSb single crystal substrate manufacturer from China
GaSb can be used as a substrate material to prepare lasers and detectors suitable for some infrared fiber transmission.
GaN SINGLE CRYSTAL
Gallium nitride GaN single crystal substrate
The substrate of HVPE is: Homoepitaxy, Gan on GaN Homogeneity: high quality, high cost, difficult technology (dislocation 103-106 / cm2)
SiC CRYSTAL
Custom made silicon carbide SiC single crystal substrate 4H-N manufacturer from China
SiC single crystal has many excellent properties, such as high thermal conductivity, high saturated electron mobility, and strong resistance to voltage breakdown. It is suitable for preparing high-frequency, high-power, high-temperature and radiation-resistant electronic devices.
InAs CRYSTAL
Custom made Indium arsenide InAs single crystal substrate manufacturer from China
InAs single crystal substrate can grow InAsSb/In-AsPSb, InNAsSb and other heterojunction materials to produce infrared light-emitting devices with wavelengths of 2-14μm. 
InP CRYSTAL
Custom made Indium phosphide InP single crystal substrate manufacturer from China
 InP single crystal materials are the key materials for the production of InP -based laser diodes ( LD )
GaAs CRYSTAL
Custom made Gallium Arsenide GaAs single crystal substrate manufacturer from China
Can be customized according to customer needs, special direction and size of the substrate
Ge CRYSTAL
Custom made Germanium Ge single crystal substrate manufacturer from China
Can be customized according to customer needs, special direction and size of the substrate
Leave A Message
If you are interested in our products and want to know more details,please leave a message here,we will reply you as soon as we can.

Home

Products

about

contact